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SG2016CAN系列编码X1G004801000300具有高精度超小型晶体振荡器

2022-08-23 15:18:43 康华尔电子

爱普生贴片式石英晶振振荡器,低电压启动功率,并且有多种电压供选择,比如有1.8V,2.5V,3.3V,3.8V,5V等,产品被广泛应用于,平板笔记本,GPS系统,光纤通道,千兆以太网,串行ATA,串行连接SCSI,PCI-Express的SDH / SONET发射基站等领域.符合RoHS/无铅.

爱普生晶振SG2016CAN,小体积晶振尺寸2.0x1.6mm,石英晶体振荡器,有源晶体,四脚贴片晶振,频率范围:1.2MHz至75MHz,电源电压:1.8V至3.3V,产品具有高精度超小型的表面贴片型轻薄型晶体振荡器,最适用于移动通信终端的基准时钟等移动通信领域.比如智能手机,无线通信,卫星导航,平台基站等较高端的数码产品,晶振本身小型,薄型具备各类移动通信的基准时钟源用频率,贴片晶振具有优良的电气特性,耐环境性能适用于移动通信领域,满足无铅焊接的高温回流温度曲线要求.

SG2016CAN系列编码X1G004801000300具有高精度超小型晶体振荡器

Product Number Model Frequency LxWxH Output Wave Supply Voltage
X1G004801000200 SG2016CAN 24.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801000300 SG2016CAN 26.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801000700 SG2016CAN 12.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801001200 SG2016CAN 25.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801001300 SG2016CAN 50.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801001400 SG2016CAN 16.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801001800 SG2016CAN 20.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002000 SG2016CAN 48.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002100 SG2016CAN 27.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002400 SG2016CAN 25.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002600 SG2016CAN 33.333300 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002700 SG2016CAN 10.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002800 SG2016CAN 50.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801002900 SG2016CAN 10.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801003000 SG2016CAN 4.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801003100 SG2016CAN 24.576000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801003500 SG2016CAN 25.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801003600 SG2016CAN 40.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801003900 SG2016CAN 26.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801004000 SG2016CAN 24.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801004400 SG2016CAN 12.288000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801004500 SG2016CAN 8.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801004600 SG2016CAN 8.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V

SG2016CAN

X1G004801004900 SG2016CAN 4.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005000 SG2016CAN 12.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005100 SG2016CAN 12.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005200 SG2016CAN 12.288000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005300 SG2016CAN 12.288000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005400 SG2016CAN 14.745600 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005500 SG2016CAN 14.745600 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005600 SG2016CAN 16.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005700 SG2016CAN 20.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005800 SG2016CAN 20.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801005900 SG2016CAN 24.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006000 SG2016CAN 24.576000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006100 SG2016CAN 27.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006200 SG2016CAN 32.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006300 SG2016CAN 32.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006400 SG2016CAN 33.330000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006500 SG2016CAN 33.330000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006600 SG2016CAN 33.333300 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006700 SG2016CAN 40.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006800 SG2016CAN 48.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801006900 SG2016CAN 48.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V
X1G004801007000 SG2016CAN 50.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V

SG2016CAN系列编码X1G004801000300具有高精度超小型晶体振荡器

有源晶振是用石英晶体组成的,石英晶片之所以能当为晶体振荡器使用,是基于它的压电效应:在晶片的两个极上加一电场,会使晶体产生机械变形;在石英晶片上加上交变电压,晶体就会产生机械振动,同时机械变形振动又会产生交变电场,虽然这种交变电场的电压极其微弱,但其振动频率是十分稳定的。当外加交变电压的频率与晶片的固有频率(由晶片的尺寸和形状决定)相等时,机械振动的幅度将急剧增加,这种现象称为压电谐振



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