TCXO温补晶振TG2016SMN,X1G0054410202,EPSON低相位噪声6G晶振

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TCXO温补晶振TG2016SMN,X1G0054410202,EPSON低相位噪声6G晶振

频率：16.369000 MHz

尺寸：2.0x1.6x0.73mm

TCXO温补晶振TG2016SMN,X1G0054410202,EPSON低相位噪声6G晶振，EPSON爱普生晶振,进口晶振型号TG2016SMN，产品编码：X1G0054410202，产品型号：TG2016SMN16.369000MHzTFGNNM，频率为：16.369000 MHz，是一款小体积晶振尺寸2.0x1.6x0.73mm,封装，四脚贴片晶振，TCXO小体积温补晶体振荡器，石英晶振，电源电压：1.8V~3.3V，工作温度：-40~+85℃，有源晶振，高稳定性和低相位噪声的TCXO有源晶振，使用Epson开发和制造的IC和MHz基晶体。相位噪声是爱普生紧凑的TCXO产品系列中最低的，使其成为GNSS和其他无线通信设备的理想参考时钟。具有超小型，轻薄型，低抖动，低功耗，低耗能，低电源电压，低损耗，低电平，低相位噪声等特点，被应用于：通讯设备晶振，GNSS射频无线通信设备LTE、WiMAX、Wi-Fi、W-LAN网联网，无线网络，蓝牙模块，GPS定位系统等。

订购热线：0755-27838351

TCXO温补晶振TG2016SMN,X1G0054410202,EPSON低相位噪声6G晶振，参数表

TG2016SMN	Symbol	VC-TCXO	TCXO	Conditions / Remarks
输出频率范围	f0	10 MHz to 55MHz
输出频率范围	f0	16.368 MHz, 16.369 MHz, 19.2 MHz, 26 MHz, 32 MHz, 38.4 MHz and 40 MHz		Standard frequency
电源电压	VCC	1.8 V ±0.1 V / 2.8 V ±5 % / 3.0 V ±5 % / 3.3 V ±5 %		Supply voltage range :1.7 V to 3.63 V
储存温度	T_stg	-40 °C to +90 °C		Storage as single product.
工作温度	T_use	G: -40 °C to +85 °C
频率容差	f_tol	±1.5 ´ 10-6 Max.		After reflow, +25 °C
“频率/温度特性”	f0-TC	C: ±0.5 ´ 10-6 Max. / G: -40 °C to +85 °C F: ±2.0 ´ 10-6 Max. / G: -40 °C to +85 °C		Standard stability version
频率/负载系数	f0-Load	±0.1 ´ 10-6 Max.		10 kW // 10 pF ±10 %
频率/电压系数	f0-VCC	±0.1 ´ 10-6 Max.		VCC ± 5 %
频率老化	f_age	±0.5 ´ 10-6 Max.		+25 °C, First year, 10MHz, 12 MHz≤ f0 ≤20 MHz, 24 MHz≤ f0 ≤40 MHz
频率老化	f_age	±1.5 ´ 10-6 Max.		+25 °C ,First year, 10 MHz< f0 <12 MHz, 20 MHz< f0 <24 MHz, 40 MHz< f0 ≤55 MHz
电流消耗		1.5 mA Max.		10 MHz≤ f0 ≤26 MHz
	ICC	1.8 mA Max.		26 MHz< f0 ≤40 MHz
		2.0 mA Max.		40 MHz< f0 ≤50 MHz
		2.1 mA Max.		50 MHz< f0 ≤55 MHz
输入电阻	Rin	500 kW Min.	-	VC - GND (DC)
频率控制范围	f_cont	±8.0 ´ 10-6 to ±12.0 ´ 10-6	-	B: VC =0.9 V ±0.6 V (VCC =1.8 V) or C: VC =1.4 V ±1.0 V (VCC =2.8 V) or D: VC =1.5 V ±1.0 V (VCC =3.0 V) or E: VC =1.65 V ±1.0 V (VCC =3.3 V)
频率变化极性	-	Positive polarity	-
对称性	SYM	45 % to 55 %		GND level (DC cut)
输出电压	VPP	0.8 V Min.		Peak to Peak
启动时间	t_str	1.0 ms Max.		T=0 at 90% Vcc
输出负载条件	Load_R	10 kW		DC cut capacitor = 0.01 mF
输出负载条件	Load_C	10 pF		DC cut capacitor = 0.01 mF

TCXO温补晶振TG2016SMN,X1G0054410202,EPSON低相位噪声6G晶振，尺寸图

TCXO温补晶振TG2016SMN,X1G0054410202,EPSON低相位噪声6G晶振

温度补偿晶振简称为温补晶振，英文简写为TCXO，是一种高精度晶振（高精度晶体振荡器）。为客户提供多种0.5ppm高精度温补晶振TCXO)及压控温补晶振（VC-TCXO）均为贴片温补晶振，EPSON有源晶振TCXO分为标准品、GPS用温补晶振、网络用温补晶振三种。其中标准品主要针对消费类市场，主要特点是超小尺寸，高精度和高性能，其外部尺寸主要提供2016mm，2520mm，3225mm，5032mm，7050mm晶振规格，频率稳定度分别有1.5ppm和2ppm两种。

TG2016SMN，TG2520SMN

晶振料号	型号	频率	尺寸	输出波形	电压
X1G0054410012	TG2016SMN	40.000000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	2.800 to 3.630 V
X1G0054410031	TG2016SMN	19.200000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	2.660 to 2.940 V
X1G0054410033	TG2016SMN	39.000000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	3.135 to 3.465 V
X1G0054410047	TG2016SMN	19.200000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	3.135 to 3.465 V
X1G0054410065	TG2016SMN	38.400000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410201	TG2016SMN	16.368000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410202	TG2016SMN	16.369000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410203	TG2016SMN	19.200000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410204	TG2016SMN	26.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410205	TG2016SMN	32.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410206	TG2016SMN	38.400000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410207	TG2016SMN	40.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410208	TG2016SMN	16.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410211	TG2016SMN	20.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410212	TG2016SMN	24.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410213	TG2016SMN	25.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410214	TG2016SMN	27.000000 MHz	2.00 x 1.60 x 0.73 mm	振荡器	1.700 to 1.900 V
X1G0054410215	TG2016SMN	30.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410216	TG2016SMN	48.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410220	TG2016SMN	52.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410221	TG2016SMN	27.600000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410223	TG2016SMN	16.384000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	1.700 to 1.900 V
X1G0054410301	TG2016SMN	16.368000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410302	TG2016SMN	16.369000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410303	TG2016SMN	19.200000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410304	TG2016SMN	26.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410305	TG2016SMN	32.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410306	TG2016SMN	38.400000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410307	TG2016SMN	40.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410308	TG2016SMN	16.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410311	TG2016SMN	20.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410312	TG2016SMN	24.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410313	TG2016SMN	25.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410314	TG2016SMN	27.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410315	TG2016SMN	30.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410316	TG2016SMN	48.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410320	TG2016SMN	52.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410321	TG2016SMN	27.600000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	2.660 to 3.465 V
X1G0054410323	TG2016SMN	16.384000 MHz	2.00 x 1.60 x 0.61 mm	Clipped sine wave	2.260 to 3.465 V