EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器
频率:156.250000 MHz
尺寸:2.5x2.0x0.84mm
EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器,日本进口晶振,EPSON爱普生晶振,型号SG2520EGN,编码为:X1G0058810002,频率:156.250000 MHz,小体积晶振尺寸为2.5x2.0x0.84mm,六脚贴片晶振,SPXO晶体振荡器,LV-PECL输出差分晶体振荡器,有源晶振,石英晶振,具有低抖动,低功耗,低损耗,低相位噪声,低电源电压,低电平等特点,能够轻易识别网络信号以及精确的处理双极信号。应用于:通讯设备,基站、光传输设备,服务器,物联网,路由器/交换机、无线网络,蓝牙模块,仪器仪表,机顶盒,光端机,光模块,以太网,安防设备及各种频率控制设备上。
	 EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器,参数表
EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器,参数表 
	 
	
		
 
				 
			
					Item 
				 
				
					Symbol 
				 
				
					Specifications 
				 
				
				 
			
				 
			
					LV-PECL 
				 
				
				 
				
					LVDS 
				 
				
					Conditions / Remarks 
				 
			
				 
			
					SG2016EGN 
				 
				
					SG2016VGN / SG2520VGN 
				 
				
				 
			
				 
			
					/ SG2520EGN 
				 
				
				 
			
				 
			
					Output frequency range 
				 
				
					fo 
				 
				
					25 MHz to 500 MHz 
				 
				
					Please contact us for available frequencies. 
				 
			
				 
			
					Supply voltage 
				 
				
					VCC 
				 
				
					C: 3.3 V ± 5 % D: 2.5 V ± 5 % 
				 
				
					E: 1.8 V ± 5 % 
				 
				
				 
			
				 
			
					Storage temperature 
				 
				
					T_stg 
				 
				
					-55℃ to +125℃ 
				 
				
				 
			
				 
			
					Operating temperature 
				 
				
					T_use 
				 
				
					G: -40℃ to +85℃, H: -40℃ to +105℃ 
				 
				
				 
			
				 
			
					Frequency tolerance 
				 
				
					f_tol 
				 
				
					D: ±25 × 10-6 Max. J: ±50 × 10-6 Max. 
				 
				
					Includes initial frequency tolerance, frequency / 
				 
			
				 
			
					temperature characteristics, frequency / voltage coefficient and 10 years aging (+25℃) 
				 
			
				 
			
					Current consumption 
				 
				
				 
				
					60 mA Max. 
				 
				
					– 
				 
				
					OE or S?  T?   = VCC, L_ECL = 50 Ω 
				 
			
				 
			
					ICC 
				 
				
				 
				
					25 mA / 30 mA / 25 mA Max. 
				 
				
					25 mA / – / 25 mA Max. 
				 
				
					25 MHz ≤ fo < 212 MHz 
				 
				
					OE or S?  T?   = VCC, Output option: A / B / C 
				 
			
				 
			
				 
				
					– 
				 
				
					28 mA / 35 mA / 28 mA Max. 
				 
				
					212 MHz ≤ fo < 392 MHz 
				 
			
				 
			
				 
				
				 
				
					28 mA / 35 mA / 30 mA Max. 
				 
				
					392 MHz ≤ fo ≤ 500 MHz 
				 
			
				 
			
					Disable current 
				 
				
					I_dis 
				 
				
					35 mA Max. 
				 
				
					20 mA Max. 
				 
				
					OE = GND 
				 
			
				 
			
					Stand-by current 
				 
				
					I_std 
				 
				
					30 μA Max. 
				 
				
					S?  T?   = GND, T_use Max. = +85℃ 
				 
			
				 
			
					60 μA Max. 
				 
				
					S?  T?   = GND, T_use Max. = +105℃ 
				 
			
				 
			
					Symmetry 
				 
				
					SYM 
				 
				
					45 % to 55 % 
				 
				
					At output crossing point 
				 
			
				 
			
					Output voltage (LV-PECL) 
				 
				
					VOH 
				 
				
					VCC - 1.1 V Min. 
				 
				
					– 
				 
				
					Output option: A, DC characteristic 
				 
			
				 
			
					VOL 
				 
				
					VCC - 1.5 V Max. 
				 
			
				 
			
					Differential swing 
				 
				
					VSW 
				 
				
					0.8 V to 2.0 V 
				 
				
					500 mV to   900 mV 
				 
				
					500 mV to   900 mV 
				 
				
					Output option: A 
				 
			
				 
			
					– 
				 
				
					800 mV to 1 600 mV 
				 
				
					– 
				 
				
					Output option: B 
				 
			
				 
			
					– 
				 
				
					600 mV to 1 200 mV 
				 
				
					600 mV to 1 200 mV 
				 
				
					Output option: C 
				 
			
				 
			
				 
				
					VOD 
				 
				
				 
				
					250 mV to   450 mV 
				 
				
					250 mV to   450 mV 
				 
				
					Output option: A 
				 
				
					Differential output voltage, VOD1, VOD2 
				 
			
				 
			
					Output voltage (LVDS) 
				 
				
					– 
				 
				
					400 mV to   800 mV 
				 
				
					– 
				 
				
					Output option: B 
				 
			
				 
			
				 
				
					300 mV to   600 mV 
				 
				
					300 mV to   600 mV 
				 
				
					Output option: C 
				 
			
				 
			
					dVOD 
				 
				
					– 
				 
				
					50 mV Max. 
				 
				
					dVOD = | VOD1 - VOD2 | 
				 
			
				 
			
					VOS 
				 
				
					– 
				 
				
					1.15 V to 1.35 V 
				 
				
					0.65 V to 0.85 V 
				 
				
					Offset voltage, VOS1, VOS2 
				 
			
				 
			
					dVOS 
				 
				
					– 
				 
				
					50 mV Max. 
				 
				
					dVOS = | VOS1 - VOS2 | 
				 
			
				 
			
					Output load condition 
				 
				
					L_ECL 
				 
				
					50 Ω 
				 
				
					– 
				 
				
					Terminated to VCC - 2.0 V 
				 
			
				 
			
					L_LVDS 
				 
				
					– 
				 
				
					100 Ω 
				 
				
					Connected between OUT and  OUT 
				 
			
				 
			
					Input voltage 
				 
				
					VIH 
				 
				
					70 % VCC Min. 
				 
				
					OE or S?  T?   terminal 
				 
			
				 
			
					VIL 
				 
				
					30 % VCC Max. 
				 
			
				 
			
					Rise/Fall times 
				 
				
					tr/tf 
				 
				
					0.35 ns Max. 
				 
				
					LV-PECL:  20 % - 80 % (VOH - VOL) 
				 
			
				 
			
					LVDS: 20 % - 80 % differential output peak to peak 
				 
			
				 
			
					Start-up time 
				 
				
					t_str 
				 
				
					10 ms Max. 
				 
				
					t = 0 at 90 % VCC 
				 
			
				 
			
					Phase jitter 
				 
				
					tPJ 
				 
				
					250 fs Max. 
				 
				
					250 fs Max. 
				 
				
					400 fs Max. 
				 
				
					25 MHz ≤ fo < 100 MHz 
				 
				
					Offset frequency 
				 
			
				 
			
					90 fs Max. 
				 
				
					100 fs Max. 
				 
				
					130 fs Max. 
				 
				
					100 MHz ≤ fo ≤ 156 MHz 
				 
				
					fo < 50 MHz: 
				 
			
				 
			
					70 fs Max. 
				 
				
					60 fs Max. 
				 
				
					70 fs Max. 
				 
				
					156 MHz < fo ≤ 212 MHz 
				 
				
					12 kHz to 5 MHz 
				 
			
				 
			
					60 fs Max. 
				 
				
					50 fs Max. 
				 
				
					60 fs Max. 
				 
				
					212 MHz < fo ≤ 391 MHz 
				 
				
					fo ≥ 50 MHz: 
				 
			
				 
		
	
					50 fs Max. 
				 
				
					391 MHz < fo ≤ 500 MHz 
				 
				
					12 kHz to 20 MHz 
				 
			
	 EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器,尺寸图
EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器,尺寸图 
EPSON物联网6G晶振,X1G0058810002,SG2520EGN低相位噪声振荡器
	晶振,作为电子产品的心脏部分,为电路提供稳定,持续的时钟信号,我们可能并不陌生,但具体细分到普通晶振(单端),差分晶振可能大家就有些分不清楚了,尤其是差分晶振。
我们所谓的单端或差分,主要是指输出模式,单端一般是CMOS,TTL电平信号,只需要一根线输出就好了,优点是走线方便,但缺点也很明显,就是抗干扰能力差,不适合高速信号(100MHz以上)。
差分晶振一般是LVDS,LVPECL等信号,需要两根线输出。优点是抗干扰能力强,缺点是布线需要注意。
单端模式是不支持高速应用的,如:125MHz,200MHz及以上,主要原因以下三点:
(1),电平幅度大,信号高低电平之间的转换时间长,不适用于传输频率达到100MHz以上的信号
(2),输出信号为单端信号(一条线),传输路径易受到干扰,不利于长线传输
(3),功耗大,大家都知道TTL器件的静态功耗较大,即使静态功耗小的CMOS器件,由于电平摆幅宽,其动态功耗也偏大。
差分信号则是两条线传输,会输出一组振幅相同,相位相反的信号。而接收端则会根据两个信号的电压差值来判断逻辑状态,所以在高速通信中,差分信号的抗干扰特性是明显优于单端信号的。
差分晶振与普通晶振的区别:
1,首先是管脚封装不同,普通晶振是4脚,差分晶振是6脚贴片晶振
2,其次是输出信号不同,普通晶振是单端输出,差分晶振则是差分输出
3,应用场合不同,普通晶振用于低速(100MHz以下),差分晶振用于高速(100MHz以上)
4,抗干扰能力也不同,差分晶振的信号抗干扰能力明显要优于普通晶振
5,价格不同,差分晶振的价格要远高于普通晶振。
	 
 
| 晶振料号 | 型号 | 频率 | 尺寸 | 输出方式 | 电源电压 | 工作温度 | 
| X1G0058810001 | SG2520EGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LV-PECL | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0058810002 | SG2520EGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LV-PECL | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0058810003 | SG2520EGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LV-PECL | 2.375 to 2.625 V | -40 to 85 °C | 
| X1G0058810005 | SG2520EGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LV-PECL | 3.135 to 3.465 V | -40 to 105 °C | 
| X1G0059010001 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0059010002 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to 85 °C | 
| X1G0059010003 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to 85 °C | 
| X1G0059010004 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to 105 °C | 
| X1G0059010006 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to 85 °C | 
| X1G0059010007 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to 105 °C | 
| X1G0059010008 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to 105 °C | 
| X1G0059210001 | SG2520EHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LV-PECL | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0059410001 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0059410002 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to 85 °C | 
| X1G0059410003 | SG2520VHN | 156.250000 MHz | 2520晶振 | LVDS | 1.710 to 1.890 V | -40 to 105 °C | 
| X1G0059410004 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to 85 °C | 
| X1G0059410005 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to 105 °C | 
| X1G0059410006 | SG2520VHN | 155.520000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0059410007 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to 85 °C | 
| X1G0059410008 | SG2520VHN | 174.703000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to 85 °C | 
| X1G0059410009 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to 105 °C | 
| X1G0059410010 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to 85 °C | 
| X1G0059410011 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to 85 °C | 
| X1G0059410603 | SG2520VHN | 400.000000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.970 to 3.465 V | -40 to 85 °C | 
| X1G0059410604 | SG2520VHN | 400.000000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.970 to 3.465 V | -40 to 85 °C | 
| X1G0059410605 | SG2520VHN | 467.529297 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to 85 °C | 
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有源晶振
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应用领域
美国晶振 / AmericaCrystal
英国晶振 / EnglandCrystal
德国晶振 / GermanyCrystal
俄国晶振 / RussiaCrystal
瑞士晶振 / SwitzerlandCrystal
新西兰晶振 / NZCrystal
韩国晶振 / KoreaCrystal
丹麦晶振 / DenmarkCrystal
加拿大晶振 / CanadaCrystal
法国晶振 / FranceCrystal
香港晶振 / HongKongCrystal
差分晶体
军工晶振
荷兰晶振 / NetherlandsCrystal
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