因此，TG5032CGN和TG5032SGN有源晶体均适用于对频率稳定性有高要求的应用场景。TG5032CGN和TG5032SGN系列VC-TCXO晶振的工作电压范围宽泛，非常适用于低电压系统的设计，使得用户在有更多的选择性，可用于常见的3.3V、5V电路设计，由于这种晶振具有较高的频率稳定度，体积小，在小电流下能够快速启动，在低电压系统中被广泛应用通讯设备晶振，工业控制，消费电子，智能安防，物联网，车载电子，光电技术及各种变频调速设备等通讯设备。

通讯设备专业晶振X1G005231001300压控温补晶体振荡器

产品编码	型号	频率	尺寸	输出波	电源电压	精度	工作温度
X1G005231000400	TG5032CGN	20.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231000500	TG5032CGN	24.576000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231000900	TG5032CGN	25.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001000	TG5032CGN	24.576000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001100	TG5032CGN	25.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001200	TG5032CGN	12.800000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001300	TG5032CGN	20.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001500	TG5032CGN	20.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001600	TG5032CGN	25.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001700	TG5032CGN	10.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231001900	TG5032CGN	10.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002000	TG5032CGN	10.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002300	TG5032CGN	25.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002500	TG5032CGN	10.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002600	TG5032CGN	40.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002700	TG5032CGN	40.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002800	TG5032CGN	20.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231002900	TG5032CGN	40.000000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231003000	TG5032CGN	38.880000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C
X1G005231003100	TG5032CGN	38.880000MHz	5.00x3.20x1.45mm	CMOS	3.135 to 3.465 V	+/-1.0ppm	-40 to ++85 °C

产品编码	振荡器	频率	尺寸	输出波	电源电压	精度	工作温度
X1G005241000200	TG5032SGN	19.200000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000300	TG5032SGN	25.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000400	TG5032SGN	40.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000700	TG5032SGN	10.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000800	TG5032SGN	26.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000900	TG5032SGN	19.200000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001000	TG5032SGN	19.200000MHz	5.00x3.20x1.45mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001200	TG5032SGN	19.200000MHz	5.00x3.20x1.45mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001300	TG5032SGN	40.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001400	TG5032SGN	10.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001500	TG5032SGN	26.000000MHz	5.00x3.20x1.45mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C

通讯设备专业晶振X1G005231001300压控温补晶体振荡器

爱普生TG5032CGN和TG5032SGN压控温补晶振差别在于输出模式，TG5032CGN采用CMOS输出，TG5032SGN则采用削波正弦波输出，设计者可根据应用需要进行合理选型。另外，两者均采用小尺寸封装，外部尺寸仅为5.0x3.2x1.45mm贴片晶振，非常节省空间，便于设计与使用，适用于包括紧凑型系统的参考时钟、Stratum3、超小型蜂窝基站和网络系统等应用领域。