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当前位置首页 » 行业资讯 » 可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

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浏览:- 发布日期:2022-09-26 13:34:17【
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随着市场小型化、多功能、高信赖度的电子产品需求量大增,产品开发周期时间要求越来越短,传统的石英晶体性能优异,但设计制造周期相对较长,如果有工程师因为项目急需特殊频点,特殊封装的晶振产品用于设计测试,很有可能无法短期内获得对应频点的样品而可能耽误设计周期,影响项目交付进度。扩展频率晶振的出现极大的解决了工程师对新产品晶振的实时变更需求

爱普生展频晶振SG-9101系列是一种通过调整时钟频率降低EMI电磁干扰的可编程晶振,频率可编程范围0.67MHz~170MHz(每步1ppm),扩展频率范围±0.25%~±4%。SG-9101新品提供更宽广的操作温度范围,及降低50%的消耗电流,SG-9101使用时可选购搭配现有的SG-Writer II专用刻录器,即可自行定义SG-9101可降低电磁干扰(EMI)展频晶体振荡器的中心频率。

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

有源晶体 频率 型号 尺寸(长宽高) 输出波 电源电压 工作温度
X1G005321001100 27.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001200 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321001300 40.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001400 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001500 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321001600 66.666000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001700 66.666000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001800 40.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001900 74.250000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002000 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002100 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002200 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002300 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002400 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002500 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002600 20.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002700 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002800 40.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002900 80.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003000 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321003100 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321003200 15.728640MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003300 37.125000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C

SG-9101CG,SG-9101CE,SG-9101CB,SG-9101CA

SG-9101系列可以分为:SG-9101CA 7050 SG-9101CB 5032 SG-9101CE 3225 SG-9101CG 2520 ,而其中SG-9101CE是小尺寸3225有源晶振同时也是销量很高的一款扩展频率晶振。SG-9101CE频率可编程范围0.67MHz~170MHz(每步1ppm),扩展频率范围±0.25%~±4%。SG-9101CE新品提供更宽广的操作温度范围,及降低50%的消耗电流

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

X1G005321003400 24.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003500 37.125000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003600 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321003700 33.333000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003800 33.333000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003900 26.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004000 24.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004100 10.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321004200 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004300 24.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004600 100.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004700 49.152000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321004800 12.288000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321004900 48.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005000 32.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005100 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005200 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005300 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005600 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005700 15.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005800 34.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005900 148.500000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321006000 34.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321006100 11.289600MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

SG-9101可编程晶体振荡器的消耗电流比现行量产产品更大幅降低了75%。SG-9101的展频时钟晶振提供几种类型的调制方式,可以实现б值为±0.5%、±0.75%、±1%、±1.5%、±2%和0.25%的调制,实践证明引入扩展频谱时钟晶体振荡器调制引入的时钟信号抖动很小。SG-9101通过动态改变时钟频率,有效降低电磁辐射功率,减少EMI电磁干扰的影响,进而解决EMC辐射超标的问题。




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